AOW296

停产单 FET,MOSFETTO-262

MOSFET N-CHANNEL 100V 70A TO262

沟道N 沟道
耐压100 V
连续漏极电流70 A
导通电阻9.7 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流70 A
导通电阻9.7 mΩ最大 · 20A
阈值电压3.4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)104W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262
其他
Base Product NumberAOW29
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2785 pF @ 50 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs9.7mOhm @ 20A, 10V
SeriesAlphaSGT™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 250µA

技术资料