IV1D06006O2 国产替代 型号

原型号

IN

InventchipIV1D06006O2

Capacitance @ Vr, F212pF @ 1V, 1MHzCurrent - Average Rectified (Io)17.4ACurrent - Reverse Leakage @ Vr10 µA @ 650 VDiode TypeSilicon Carbide Schottky