DIODE GEN PURP 50V 6A DO4

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反向耐压50 V
平均整流电流6 A
正向压降1.4 V
类型标准

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技术参数

反向耐压50 V
平均整流电流6 A
正向压降1.4 V最大 · 6 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)6A
Current - Reverse Leakage @ Vr15 µA @ 50 V
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 6 A
环境与封装
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction-65°C~150°C
PackageBulk
Package / CaseDO-203AA, DO-4, Stud
Supplier Device PackageDO-4
其他
Base Product Number1N3879
Capacitance @ Vr, F-
Diode TypeStandard
MfrGeneSiC Semiconductor
Product StatusActive
Reverse Recovery Time (trr)200 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

技术资料