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| 环境与封装 | |
|---|---|
| AEC Qualified | Yes |
| 其他 | |
| Category | Medium Power Transistor |
| f T (MHz) | 300 |
| fT (MHz) | 300 |
| h FE (@ I C ) | 0.2 |
| h FE (@ I C 2) | N/A |
| hFE (@ IC2) (A) | - |
| hFE (@ IC) (A) | 0.2 |
| h FE (min) | 270 |
| hFE (Min) | 270 |
| h FE (Min 2) | - |
| I C (A) | 1.5 |
| IC (A) | 1.5 |
| I CM (A) | 3 |
| ICM (A) | 3 |
| P D (W) | 0.5 |
| PD (W) | 0.3 |
| Polarity | PNP |
| Product Type | PNP |
| R CE(SAT) | N/A |
| V CEO , V CES (V) | 12 |
| VCEO, VCES (V) | 12 |
| V CE (SAT) (@ I C /I B 2) (A/mA) | - |
| VCE(sat) (@ IC/IB2) (A/mA) | - |
| V CE(SAT) (@ IC/IB) (A/mA) | 0.5/25 |
| VCE (SAT) (@ IC/IB) (A/m A) | 0.5/25 |
| V CE (SAT) (Max.2) | N/A |
| VCE(sat) (Max.2) (mV) | - |
| V CE (SAT) Max (mV) | 200 |
| VCE(sat) Max (mV) | 200 |