MOSFET N-CH 500V 12A TO3
沟道N 沟道
耐压500 V
连续漏极电流12 A
导通电阻500 mΩ
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沟道N 沟道
耐压500 V
连续漏极电流12 A
导通电阻500 mΩ最大 · 12A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-204AE |
| Supplier Device Package | TO-3 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Mfr | Microsemi Corporation |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |