Silicon PNP epitaxial planar transistor
集射极耐压-120 V
全部替代型号
查看完整报告技术参数
集射极耐压-120 V
| 环境与封装 | |
|---|---|
| Automotive Qualified | NO |
| Package | TO3PF-3L |
| Package Weight (Typ.) | 6.5 g |
| RoHS | YES |
| 其他 | |
| Application | Audio, general purpose |
| Chip Division | Single |
| Clamp Diode | NO |
| Complimentary | 2SC5100 |
| hFECondition IC | -3.0 A |
| hFECondition VCE | -4 V |
| hFE (max.) | 180 |
| hFE (min.) | 50 |
| IC (-) | -8 A |
| PC | 75.0 W |
| Polarity | PNP |
| VCBO | -120 V |
| VCEO | -120 V |
| VCE(SAT) (max.) | -0.50 V |