MOSFET P-CH 20V 12.5A TO252
沟道P 沟道
耐压20 V
连续漏极电流12.5 A
导通电阻75 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流12.5 A
导通电阻75 mΩ最大 · 12.5A
阈值电压1.4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 2W (Ta), 18.8W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 10 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 12.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |