AON6522

MOSFET N-CH 25V 71A/200A 8DFN

沟道N 沟道
耐压25 V
连续漏极电流71 ~ 200 A
导通电阻950 µΩ

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技术参数

沟道N 沟道
耐压25 V
连续漏极电流71 ~ 200 A
导通电阻950 µΩ最大 · 20A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C71A (Ta), 200A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)7.3W (Ta), 83W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerSMD, Flat Leads
Supplier Device Package8-DFN (5x6)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7036 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs0.95mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

器件图片

技术资料