MOSFET N-CH 1000V 4A TO247
沟道N 沟道
耐压1 kV
连续漏极电流4 A
导通电阻3 Ω
全部替代型号
查看完整报告已收录 38 个替代型号，其中国产替代 11 个，登录后查看。
技术参数
沟道N 沟道
耐压1 kV
连续漏极电流4 A
导通电阻3 Ω最大 · 2A
阈值电压5 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 139W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| 其他 | |
| Base Product Number | APT1003 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 694 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| Series | POWER MOS 7® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |