MOSFET N-CH 1000V 42A ISOTOP
沟道N 沟道
耐压1 kV
连续漏极电流42 A
导通电阻210 mΩ
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沟道N 沟道
耐压1 kV
连续漏极电流42 A
导通电阻210 mΩ最大 · 33A
阈值电压5 V最大 · 5mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 960W (Tc) |
| 环境与封装 | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | ISOTOP® |
| 其他 | |
| Base Product Number | APT41F100 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18500 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 33A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |