MOSFET N-CH 800V 20A D3PAK
沟道N 沟道
耐压800 V
连续漏极电流20 A
导通电阻430 mΩ
全部替代型号
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技术参数
沟道N 沟道
耐压800 V
连续漏极电流20 A
导通电阻430 mΩ最大 · 10A
阈值电压5 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | D3 [S] |
| 其他 | |
| Base Product Number | APT8043 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 10A, 10V |
| Series | POWER MOS 7® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |