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技术参数

电源
Current - Continuous Drain (Id) @ 25°C34A
Drain to Source Voltage (Vdss)1200V (1.2kV)
Power - Max780W
环境与封装
Mounting TypeChassis Mount
Operating Temperature-40°C~150°C(TJ)
PackageBulk
Package / CaseSP4
Supplier Device PackageSP4
其他
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
MfrMicrosemi Corporation
Product StatusObsolete
Rds On (Max) @ Id, Vgs348mOhm @ 17A, 10V
Series-
Vgs(th) (Max) @ Id5V @ 5mA

技术资料