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已收录 23 个替代型号,其中国产替代 5 个,登录后查看。

技术参数

电源
Current - Continuous Drain (Id) @ 25°C150A
Drain to Source Voltage (Vdss)500V
Power - Max1250W
环境与封装
Mounting TypeChassis Mount
Operating Temperature-40°C~150°C(TJ)
PackageBulk
Package / CaseSP6
Supplier Device PackageSP6
其他
Base Product NumberAPTM50
FET FeatureSilicon Carbide (SiC)
FET Type2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs434nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds19600pF @ 25V
MfrMicrochip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs28mOhm @ 75A, 10V
Series-
Vgs(th) (Max) @ Id5V @ 6mA

技术资料

该型号暂未收录资料。