MOSFET 2N-CH 1200V 131A D3
全部替代型号
查看完整报告已收录 64 个替代型号，其中国产替代 2 个，登录后查看。
技术参数
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 131A (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Power - Max | 625W |
| 环境与封装 | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | D-3 Module |
| Supplier Device Package | D3 |
| 其他 | |
| Base Product Number | APTMC120 |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 246nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 1000V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 100A, 20V |
| Series | - |
| Vgs(th) (Max) @ Id | 2.2V @ 5mA (Typ) |
器件图片
技术资料
该型号暂未收录资料。