BL(上海贝岭)中国
BLP075N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.
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| 环境与封装 | |
|---|---|
| Package | TO220 TO263 |
| 其他 | |
| ID(Max.) | 72A |
| Mode | N-Channel |
| Qg(Typ) | 54nC |
| RDS(on)(Max.) | 7.5mΩ |
| Type | SGT MOSFETs |
| VDS(Max.) | 100V |