BL(上海贝岭)中国
BLP13N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.
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| 环境与封装 | |
|---|---|
| Package | PDFN3.3X3.3 |
| 其他 | |
| ID(Max.) | 34A |
| Qg(Typ) | 32nC |
| RDS(on)(Max.) | 15mΩ |
| Type | SGT MOSFETs |
| VDS(Max.) | 100V |