BL(上海贝岭)中国
BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl
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| 环境与封装 | |
|---|---|
| Package | TO220 TO220F TO251 TO252 |
| 其他 | |
| ID(Max.) | 8A |
| Mode | N-Channel |
| Qg(Typ) | 16nC |
| RDS(on)(Max.) | 520mΩ |
| Type | SJ MOSFETs |
| VDS(Max.) | 600V |