MOSFET P-CH 60V 1.9A SOT223-4
沟道P 沟道
耐压60 V
连续漏极电流1.9 A
导通电阻300 mΩ
全部替代型号
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技术参数
沟道P 沟道
耐压60 V
连续漏极电流1.9 A
导通电阻300 mΩ最大 · 1.9A
阈值电压2 V最大 · 460μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-21 |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.9A, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 460µA |