MOSFET N-CH 100V 11A/40A TSDSON
沟道N 沟道
耐压100 V
连续漏极电流11 ~ 40 A
导通电阻9.6 mΩ
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沟道N 沟道
耐压100 V
连续漏极电流11 ~ 40 A
导通电阻9.6 mΩ最大 · 20A
阈值电压2.3 V最大 · 36μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8 FL |
| 其他 | |
| Base Product Number | BSZ0804 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
| Mfr | Infineon Technologies |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
| Series | OptiMOS™ 5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 36µA |