沟道P 沟道
耐压20 V
连续漏极电流2.5 A
导通电阻94 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流2.5 A
导通电阻94 mΩ最大 · 500mA
阈值电压1.2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Power Dissipation (Max) | 500mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 3-XFDFN |
| Supplier Device Package | 3-PICOSTAR |
| 其他 | |
| Base Product Number | CSD25484 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
| Mfr | Texas Instruments |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 500mA, 8V |
| Series | FemtoFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -12V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
技术资料
该型号暂未收录资料。