CSD87384M

CSD87384M

在产晶体管 - FET,MOSFET - 阵列5 x 3.5 LGA

MOSFET 2N-CH 30V 30A 5PTAB

CSD87384M 是 TI 的同步降压 NexFET Power Block II,5x3.5mm LGA 封装,30V 耐压,支持 30A 连续电流,优化 5V 栅极驱动,RoHS 合规。规格书核对

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23 项
参数值和测试条件出处
封装5 x 3.5 LGA
工作温度-55 to 150 °C
RoHSYes
无卤Halogen Free
绝对最大额定值VIN to PGND: -0.8 to 30 V; VSW to PGND: 30 V; TG to VSW: -8 to 10 V; BG to PGND: -8 to 10 V; TJ: -55 to 150 °C
推荐工作条件VGS: 4.5 to 8 V; VIN: 24 V; fSW: 200 to 1500 kHz; Operating Current: 30 A (No Airflow); TJ: 125 °C
漏源击穿电压30 V (Q1 Control FET, Q2 Sync FET), VGS=0 V, IDS=250 μA
漏源导通电阻Q1: 7.5 mΩ (Typ), 8.9 mΩ (Max) @ VGS=4.5 V, IDS=25 A; Q2: 2.15 mΩ (Typ), 2.6 mΩ (Max) @ VGS=4.5 V, IDS=25 A
栅源阈值电压Q1: 1.1 V (Min), 1.9 V (Max); Q2: 1.1 V (Min), 1.7 V (Max), VDS=VGS, IDS=250 μA
栅极电荷Q1: 7.1 nC (Typ), 9.2 nC (Max); Q2: 31 nC (Typ), 40 nC (Max), VDS=15 V, IDS=25 A
输入电容Q1: 884 pF (Typ), 1150 pF (Max); Q2: 3760 pF (Typ), 4890 pF (Max), VGS=0 V, VDS=15 V, f=1MHz
输出电容Q1: 452 pF (Typ), 588 pF (Max); Q2: 1110 pF (Typ), 1440 pF (Max), VGS=0 V, VDS=15 V, f=1MHz
反向传输电容Q1: 19.4 pF (Typ), 25.2 pF (Max); Q2: 87 pF (Typ), 114 pF (Max), VGS=0 V, VDS=15 V, f=1MHz
串联栅极电阻Q1: 1.0 Ω (Typ), 2.0 Ω (Max); Q2: 0.7 Ω (Typ), 1.4 Ω (Max)
二极管正向电压Q1: 0.85 V (Typ); Q2: 0.80 V (Typ), IDS=25 A, VGS=0 V
反向恢复电荷Q1: 21 nC (Typ); Q2: 51 nC (Typ), Vdd=15 V, IF=25 A, di/dt=300 A/μs
反向恢复时间Q1: 21 ns (Typ); Q2: 32 ns (Typ), Vdd=15 V, IF=25 A, di/dt=300 A/μs
功率损耗3.7 W (Typ), VIN=12 V, VGS=5 V, VOUT=1.3 V, IOUT=25 A, fSW=500 kHz, LOUT=0.3 μH, TJ=25°C
静态电流10 μA (Typ), TG to TGR=0 V, BG to PGND=0 V
结到环境热阻153 °C/W (Min Cu), 67 °C/W (Max Cu)
结到外壳热阻3.0 °C/W (Top of package), 1.25 °C/W (PGND Pin)
脉冲电流额定值95 A (Max), Pulse Duration ≤50 µs, duty cycle ≤0.01
功率耗散8 W (Max), Device mounted on FR4 material with 1 inch 2 (6.45 cm 2 ) Cu
全部参数(18 项)展开收起
电源
Current - Continuous Drain (Id) @ 25°C30A
Drain to Source Voltage (Vdss)30V
Power - Max8W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case5-LGA
Supplier Device Package5-PTAB (5x3.5)
其他
Base Product NumberCSD87384
FET FeatureLogic Level Gate
FET Type2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1150pF @ 15V
MfrTexas Instruments
Product StatusActive
Rds On (Max) @ Id, Vgs7.7mOhm @ 25A, 8V
SeriesNexFET™
Vgs(th) (Max) @ Id1.9V @ 250µA

引脚与封装

封装5 x 3.5 LGA

脚位名称功能出处
1TG(Top Gate)
2VIN(Input Voltage)
3PGND(Power Ground)
4BG(Bottom Gate)
5VSW(Switch Node)

器件图片

技术资料

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