MOSFET 2N-CH 30V 30A 5PTAB
CSD87384M 是 TI 的同步降压 NexFET Power Block II,5x3.5mm LGA 封装,30V 耐压,支持 30A 连续电流,优化 5V 栅极驱动,RoHS 合规。规格书核对
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23 项| 参数 | 值和测试条件 | 出处 |
|---|---|---|
| 封装 | 5 x 3.5 LGA | |
| 工作温度 | -55 to 150 °C | |
| RoHS | Yes | |
| 无卤 | Halogen Free | |
| 绝对最大额定值 | VIN to PGND: -0.8 to 30 V; VSW to PGND: 30 V; TG to VSW: -8 to 10 V; BG to PGND: -8 to 10 V; TJ: -55 to 150 °C | |
| 推荐工作条件 | VGS: 4.5 to 8 V; VIN: 24 V; fSW: 200 to 1500 kHz; Operating Current: 30 A (No Airflow); TJ: 125 °C |
全部参数(18 项)
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 8W |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 5-LGA |
| Supplier Device Package | 5-PTAB (5x3.5) |
| 其他 | |
| Base Product Number | CSD87384 |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 25A, 8V |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
引脚与封装
封装5 x 3.5 LGA
| 脚位 | 名称 | 功能 | 出处 |
|---|---|---|---|
| 1 | TG | (Top Gate) | |
| 2 | VIN | (Input Voltage) | |
| 3 | PGND | (Power Ground) | |
| 4 | BG | (Bottom Gate) | |
| 5 | VSW | (Switch Node) |
器件图片
技术资料
规格书核对内容由 AI 从原厂规格书提取,点页码查看原文。