30V Complementary Enhancement Mode MOSFET
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| 环境与封装 | |
|---|---|
| AEC Qualified | Yes |
| 其他 | |
| C ISS Condition @|V DS | (V) | 25,25 V |
| C ISS Typ (pF) | 501, 590 pF |
| Compliance (Only Automotive Supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |I DS | @T A = +25°C (A) | 8.5, 5.5 A |
| P D @T A = +25°C (W) | 1.2 W |
| Polarity | N+P |
| Q G Typ @ |V GS | = 10V (nC) | 9.8, 10.5 nC |
| Q G Typ @ |V GS | = 4.5V (nC) | 4.6, 5.1 nC |
| R DS(ON) Max@ V GS (10V) (mΩ) | 20, 45 mΩ |
| R DS(ON) Max@ V GS (4.5V) (mΩ) | 32, 85 mΩ |
| |V DS | (V) | 30, 30 V |
| |V GS(TH) | Max (V) | 2, 2 V |
| |V GS | (±V) | 20, 20 ±V |