40V Complementary Enhancement Mode MOSFET H-Bridge
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| 环境与封装 | |
|---|---|
| AEC Qualified | Yes |
| 其他 | |
| C ISS Condition @|V DS | (V) | 20, 20 V |
| C ISS Typ (pF) | 574, 587 pF |
| Compliance (Only Automotive Supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |I DS | @T A = +25°C (A) | 4.5, 3.7 A |
| P D @T A = +25°C (W) | 1.5 W |
| Polarity | 2N2P |
| Q G Typ @ |V GS | = 10V (nC) | 12.5, 11.1 nC |
| R DS(ON) Max@ V GS (10V) (mΩ) | 45, 65 mΩ |
| R DS(ON) Max@ V GS (4.5V) (mΩ) | 58, 100 mΩ |
| |V DS | (V) | 40 V |
| |V GS(TH) | Max (V) | 3, 3 V |
| |V GS(TH) | Min (V) | 1, 1 V |
| |V GS | (±V) | 20 ±V |