沟道N 沟道
耐压200 V
连续漏极电流3 A
导通电阻100 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压200 V
连续漏极电流3 A
导通电阻100 mΩ最大 · 3A
阈值电压2.5 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Power Dissipation (Max) | - |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~125°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | Die |
| Supplier Device Package | Die |
| 其他 | |
| Base Product Number | EPC20 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 145 pF @ 100 V |
| Mfr | EPC |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V |
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
器件图片
技术资料
该型号暂未收录资料。