EPC2016
EPC美国

GANFET N-CH 100V 11A DIE

沟道N 沟道
耐压100 V
连续漏极电流11 A
导通电阻16 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压100 V
连续漏极电流11 A
导通电阻16 mΩ最大 · 11A
阈值电压2.5 V最大 · 3mA
电源
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5V
Power Dissipation (Max)-
环境与封装
Mounting TypeSurface Mount
Operating Temperature-40°C~125°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseDie
Supplier Device PackageDie
其他
Base Product NumberEPC20
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds520 pF @ 50 V
MfrEPC
Product StatusDiscontinued at Digi-Key
Rds On (Max) @ Id, Vgs16mOhm @ 11A, 5V
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+6V, -5V
Vgs(th) (Max) @ Id2.5V @ 3mA

器件图片

技术资料