沟道P 沟道
耐压20 V
连续漏极电流3.3 A
导通电阻125 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流3.3 A
导通电阻125 mΩ最大 · 3.3A
阈值电压2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 900mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| 其他 | |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 3.3A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
技术资料
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