onsemi美国

FDI8441

停产晶体管 - FET,MOSFET - 单TO-262-3 Long Leads

MOSFET N-CH 40V 26A/80A I2PAK

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沟道N 沟道
耐压40 V
连续漏极电流26 ~ 80 A
导通电阻2.7 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流26 ~ 80 A
导通电阻2.7 mΩ最大 · 80A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C26A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK (TO-262)
其他
Base Product NumberFDI8441
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.7mOhm @ 80A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料

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