onsemi美国

MOSFET N-CH 20V 16.5A 8MLP

沟道N 沟道
耐压20 V
连续漏极电流16.5 A
导通电阻5 mΩ

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技术参数

沟道N 沟道
耐压20 V
连续漏极电流16.5 A
导通电阻5 mΩ最大 · 16.5A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2W (Ta), 41W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)
其他
Base Product NumberFDMC85
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 10 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs5mOhm @ 16.5A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料