onsemi美国

MOSFET N-CH 30V 19A/22A 8PQFN

沟道N 沟道
耐压30 V
连续漏极电流19 ~ 22 A
导通电阻4.3 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流19 ~ 22 A
导通电阻4.3 mΩ最大 · 19A
阈值电压3 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C19A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 41W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
其他
Base Product NumberFDMS0310
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2280 pF @ 15 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs4.3mOhm @ 19A, 10V
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

技术资料