FDMS3606AS
onsemi美国

MOSFET 2N-CH 30V 13A/27A POWER56

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C13A, 27A
Drain to Source Voltage (Vdss)30V
Power - Max1W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device PackagePower56
其他
Base Product NumberFDMS3606
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1695pF @ 15V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
SeriesPowerTrench®
Vgs(th) (Max) @ Id2.7V @ 250µA

器件图片

技术资料