onsemi美国

MOSFET N-CH 60V 10.6A/22A 8MLP

沟道N 沟道
耐压60 V
连续漏极电流10.6 ~ 22 A
导通电阻11.5 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压60 V
连续漏极电流10.6 ~ 22 A
导通电阻11.5 mΩ最大 · 10.6A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C10.6A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.5W (Ta), 78W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (5x6), Power56
其他
Base Product NumberFDMS56
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 30 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs11.5mOhm @ 10.6A, 10V
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料