FDMS8050
onsemi美国

FDMS8050

不推荐用于新设计晶体管 - FET,MOSFET - 单

MOSFET N-CHANNEL 30V 55A 8PQFN

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沟道N 沟道
耐压30 V
连续漏极电流55 A
导通电阻650 µΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流55 A
导通电阻650 µΩ最大 · 55A
阈值电压3 V最大 · 750μA
电源
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)156W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
其他
Base Product NumberFDMS80
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds22610 pF @ 15 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs0.65mOhm @ 55A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 750µA

器件图片

技术资料