SMALL SIGNAL FIELD-EFFECT TRANSI

沟道P 沟道
耐压20 V
连续漏极电流2 A
导通电阻70 mΩ

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技术参数

沟道P 沟道
耐压20 V
连续漏极电流2 A
导通电阻70 mΩ最大 · 2A
阈值电压1.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)500mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseDie
Supplier Device PackageDie
其他
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds779 pF @ 10 V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs70mOhm @ 2A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料