onsemi美国

MOSFET 2N-CH 25V 13A/26A PWR CLP

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C13A, 26A
Drain to Source Voltage (Vdss)25V
Power - Max800mW, 900mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device PackagePowerclip-33
其他
Base Product NumberFDPC8012
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1075pF @ 13V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs7mOhm @ 12A, 4.5V
SeriesPowerTrench®
Vgs(th) (Max) @ Id2.2V @ 250µA

技术资料