onsemi美国

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C6.9A, 8.2A
Drain to Source Voltage (Vdss)30V
Power - Max900mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberFDS69
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 15V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs27mOhm @ 6.9A, 10V
SeriesPowerTrench®, SyncFET™
Vgs(th) (Max) @ Id3V @ 250µA

技术资料