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技术参数

电源
Current - Continuous Drain (Id) @ 25°C6.3A, 8.6A
Drain to Source Voltage (Vdss)30V
Power - Max900mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 10V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs28mOhm @ 6.3A, 10V
Series-
Vgs(th) (Max) @ Id3V @ 250µA

技术资料