FDU6644

在产单 FET,MOSFETTO-251

N-CHANNEL POWER MOSFET

沟道N 沟道
耐压30 V
连续漏极电流67 A
导通电阻8.5 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流67 A
导通电阻8.5 mΩ最大 · 16A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C67A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.6W (Ta)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageBulk
Package / CaseTO-251-3 Stub Leads, IPAK
Supplier Device PackageTO-251 (IPAK)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3087 pF @ 15 V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs8.5mOhm @ 16A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料