onsemi美国

MOSFET N-CH 30V 13.5A 30BGA

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沟道N 沟道
耐压30 V
连续漏极电流13.5 A
导通电阻5.6 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流13.5 A
导通电阻5.6 mΩ最大 · 13.5A
阈值电压3 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.2W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / Case30-WFBGA
Supplier Device Package30-BGA (4x3.5)
其他
Base Product NumberFDZ70
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1960 pF @ 15 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.6mOhm @ 13.5A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

技术资料