类型PNP
集射极耐压40 V
集电极电流150 mA
放大倍数 hFE100
全部替代型号
查看完整报告技术参数
类型PNP
集射极耐压40 V
集电极电流150 mA最大
放大倍数 hFE10010mA
功率150 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 150 mA |
| Power - Max | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563F |
| 其他 | |
| Base Product Number | FJYF29 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
技术资料
该型号暂未收录资料。