类型PNP
集射极耐压60 V
集电极电流2 A
放大倍数 hFE100
全部替代型号
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技术参数
类型PNP
集射极耐压60 V
集电极电流2 A最大
放大倍数 hFE100500mA
功率500 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 2 A |
| Power - Max | 500 mW |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 75MHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| 其他 | |
| Base Product Number | FSB660 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 2A |
器件图片
技术资料
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