GPI65005DF
GaNPower美国

GANFET N-CH 650V 5A DFN 5X6

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沟道N 沟道
耐压650 V
连续漏极电流5 A
阈值电压1.4 V

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流5 A
阈值电压1.4 V最大 · 1.75mA
电源
Current - Continuous Drain (Id) @ 25°C5A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)6V
Power Dissipation (Max)-
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / CaseDie
Supplier Device PackageDie
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds45 pF @ 400 V
MfrGaNPower
Product StatusActive
Series-
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+7.5V, -12V
Vgs(th) (Max) @ Id1.4V @ 1.75mA

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技术资料