HT8KC5

HT8KC5

在产单 FET,MOSFET

60V 10A, Dual Nch+Nch, HSMT8, Power MOSFET

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技术参数

电源
Drain Current I D [A]10
Drain-Source Voltage V DSS [V]60
Drive Voltage[V]4.5
Power Dissipation (PD)[W]13
环境与封装
Mounting StyleSurface mount
Package CodeHSMT8
Package Size [mm]3.3x3.3 (t=0.9)
Storage Temperature (Max)[℃]150
Storage Temperature (Min)[℃]-55
其他
Number of terminal8
PolarityNch+Nch
R DS(on) [Ω] V GS =10V(Typ)0.069
R DS(on) [Ω] V GS =4.5V(Typ)0.099
R DS(on) [Ω] V GS =Drive (Typ)0.099
Total gate charge Q g [nC]1.7

器件图片

技术资料