IPLT60R180CM8

IPLT60R180CM8

在产单 FET,MOSFET

Explore 600 V CoolMOS™ 8 Power Transistor

阈值电压4.2 V

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技术参数

阈值电压4.2 V最大
环境与封装
MountingSMT
Operating Temperature range-55 °C to 150 °C
PackageTOLT
其他
IDpuls max48 A
PolarityN
QG17 nC
QG (typ @10V)17 nC
RDS (on) (@10V) max180 mΩ
RDS (on) (@ Tj = 25°C) max180 mΩ
Special FeaturesBest price-performance with highest efficiency and fast recovery diode
VDS max600 V
VGS(th)4.2 V
VGS(th) range3.7 V to 4.7 V

器件图片

技术资料