MOSFET N-CH 200V 3.3A I2PAK
沟道N 沟道
耐压200 V
连续漏极电流3.3 A
导通电阻1.5 Ω
全部替代型号
查看完整报告已收录 7 个替代型号，登录后查看。
技术参数
沟道N 沟道
耐压200 V
连续漏极电流3.3 A
导通电阻1.5 Ω最大 · 2A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 3W (Ta), 36W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| 其他 | |
| Base Product Number | IRF610 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |