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技术参数

电源
Current - Continuous Drain (Id) @ 25°C5.3A
Drain to Source Voltage (Vdss)20V
Power - Max2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
FET FeatureLogic Level Gate
FET Type2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 15V
MfrInternational Rectifier
Product StatusObsolete
Rds On (Max) @ Id, Vgs58mOhm @ 2.9A, 4.5V
SeriesHEXFET®
Vgs(th) (Max) @ Id700mV @ 250µA

技术资料