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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.5A, 2.3A
Drain to Source Voltage (Vdss)30V
Power - Max2W
环境与封装
Mounting TypeSurface Mount
PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
MfrInternational Rectifier
Product StatusObsolete
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 10V
SeriesHEXFET®
Vgs(th) (Max) @ Id1V @ 250µA

器件图片

技术资料