IRFR421

N-CHANNEL POWER MOSFET

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沟道N 沟道
耐压450 V
连续漏极电流2.5 A
导通电阻3 Ω

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技术参数

沟道N 沟道
耐压450 V
连续漏极电流2.5 A
导通电阻3 Ω最大 · 1.3A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drain to Source Voltage (Vdss)450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)50W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
MfrHarris Corporation
Product StatusActive
Rds On (Max) @ Id, Vgs3Ohm @ 1.3A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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技术资料

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