MOSFET N-CH 100V 97A TO263-3-2
沟道N 沟道
耐压100 V
连续漏极电流97 A
导通电阻9 mΩ
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沟道N 沟道
耐压100 V
连续漏极电流97 A
导通电阻9 mΩ最大 · 58A
阈值电压4 V最大 · 150μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 230W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V |
| Mfr | International Rectifier |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
技术资料
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