MOSFET N-CH 55V 3.1A SOT223
沟道N 沟道
耐压55 V
连续漏极电流3.1 A
导通电阻65 mΩ
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沟道N 沟道
耐压55 V
连续漏极电流3.1 A
导通电阻65 mΩ最大 · 3.1A
阈值电压2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Drain to Source Voltage (Vdss) | 55 V |
| Power Dissipation (Max) | 1W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Mfr | International Rectifier |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
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