IRLR024TRLPBF

单 FET,MOSFETTO-252-3

MOSFET N-CH 60V 14A DPAK

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沟道N 沟道
耐压60 V
连续漏极电流14 A
导通电阻100 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流14 A
导通电阻100 mΩ最大 · 8.4A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
其他
Base Product NumberIRLR024
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V
MfrVishay Siliconix
PackagingTape & Reel (TR)
Part StatusLast Time Buy
Rds On (Max) @ Id, Vgs100mOhm @ 8.4A, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250µA

技术资料

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